类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 行间距 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 雪崩能量等级(Eas) | 场效应管技术 | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | IRF7329TRPBF | Infineon Technologies | 数据表 | 20 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 340 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | -12V | 2W | 鸥翼 | -9.2A | IRF7329PBF | Dual | 增强型MOSFET | 2W | 10 ns | 2 P-Channel (Dual) | SWITCHING | 17m Ω @ 9.2A, 4.5V | 900mV @ 250μA | 3450pF @ 10V | 57nC @ 4.5V | 8.6ns | 12V | 260 ns | 9.2A | 8V | 0.017Ohm | -12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6332C-F085 | ON Semiconductor | 数据表 | 4184 In Stock | - | 最小起订量: 1 最小包装量: 1 | 42 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 700mA 600mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 6 | DUAL | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | 不合格 | 2 | 增强型MOSFET | 300mW | N and P-Channel | SWITCHING | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 113pF @ 10V | 1.5nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 12V | 0.7A | 0.3Ohm | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7314TRPBF | Infineon Technologies | 数据表 | 77 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.3A | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 58mOhm | 雪崩 额定 | -20V | 2W | 鸥翼 | 260 | -5.3A | 30 | IRF7314PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 15 ns | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 2.9A, 4.5V | 700mV @ 250μA | 780pF @ 15V | 29nC @ 4.5V | 40ns | 20V | 49 ns | -5.3A | -700mV | 12V | -20V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 71 ns | 逻辑电平门 | -700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
![]() | DMC2038LVT-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | Gold | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 3.7A 2.6A | 2 | 21 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 74mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 800mW | DUAL | 鸥翼 | 260 | 40 | DMC2038 | 6 | 增强型MOSFET | 800mW | 11 ns | N and P-Channel | SWITCHING | 35m Ω @ 4A, 4.5V | 1V @ 250μA | 530pF @ 10V | 17nC @ 10V | N-CHANNEL AND P-CHANNEL | 2.6A | 12V | 4.5A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 100 pF | 1mm | 2.95mm | 1.65mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
FDC6561AN | ON Semiconductor | 数据表 | 29700 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 95mOhm | 逻辑电平兼容 | 30V | 960mW | 鸥翼 | 2.5A | 30V | Dual | 24A | 增强型MOSFET | 960mW | 6 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 220pF @ 15V | 3.2nC @ 5V | 10ns | 10 ns | 2.5A | 20V | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
FDS6912A | ON Semiconductor | 数据表 | 56292 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 23 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 28MOhm | Tin (Sn) | 逻辑电平兼容 | 30V | 1.6W | 鸥翼 | 6A | Dual | 增强型MOSFET | 1.6W | 8 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 6A, 10V | 3V @ 250μA | 575pF @ 15V | 8.1nC @ 5V | 5ns | 5 ns | 6A | 1.9V | 20V | 6A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | IRF7507TRPBF | Infineon Technologies | 数据表 | 18 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 2.4A 1.7A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 270mOhm | Matte Tin (Sn) | 超低电阻 | 1.25W | DUAL | 鸥翼 | 260 | 40 | IRF7507PBF | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 260pF @ 15V | 8nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 2.4A | 700mV | 12V | 20V | 19A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 860μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | IRF7311TRPBF | Infineon Technologies | 数据表 | 13 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | Matte Tin (Sn) | AVALANCHE RATED, ULTRA LOW RESISTANCE | 20V | 2W | 鸥翼 | 6.6A | IRF7311PBF | Dual | 增强型MOSFET | 2W | 8.1 ns | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 900pF @ 15V | 27nC @ 4.5V | 17ns | 31 ns | 6.6A | 700mV | 12V | 20V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 77 ns | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | BSD223PH6327XTSA1 | Infineon Technologies | 数据表 | 3770 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 5.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 8541.21.00.95 | -20V | 250mW | 鸥翼 | 未说明 | -350mA | 未说明 | BSD223 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.8 ns | 2 P-Channel (Dual) | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 无卤素 | 56pF @ 15V | 0.62nC @ 4.5V | 5ns | 20V | 390mA | 12V | -20V | 0.39A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 22 pF | 800μm | 2mm | 1.25mm | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | FDG6317NZ | ON Semiconductor | 数据表 | 27071 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 7.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 560MOhm | Tin (Sn) | 20V | 300mW | 鸥翼 | 700mA | Dual | 增强型MOSFET | 300mW | 5.5 ns | 2 N-Channel (Dual) | SWITCHING | 400m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 66.5pF @ 10V | 1.1nC @ 4.5V | 7ns | 2.5 ns | 700mA | 1.2V | 12V | 0.7A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | FDG6303N | ON Semiconductor | 数据表 | 62268 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 450mOhm | 逻辑电平兼容 | 25V | 300mW | 鸥翼 | 500mA | Dual | 增强型MOSFET | 300mW | 3 ns | 2 N-Channel (Dual) | SWITCHING | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 8.5ns | 8.5 ns | 500mA | 800mV | 8V | 0.5A | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | IRF7506TRPBF | Infineon Technologies | 数据表 | 1862 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 1.7A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 不用于新设计 | 2 (1 Year) | 8 | SMD/SMT | 270mOhm | 逻辑电平兼容 | 1.25W | 鸥翼 | IRF7506PBF | Dual | 增强型MOSFET | 1.25W | 9.7 ns | 2 P-Channel (Dual) | SWITCHING | 270m Ω @ 1.2A, 10V | 1V @ 250μA | 180pF @ 25V | 11nC @ 10V | 12ns | 30V | 9.3 ns | -1.7A | -1V | 20V | -30V | 9.6A | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1 V | 910μm | 3.048mm | 3.048mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
NTJD4152PT1G | ON Semiconductor | 数据表 | 1892 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 23 hours ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 13.5 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 215MOhm | Tin (Sn) | -20V | 272mW | 鸥翼 | 260 | -880mA | 40 | NTJD4152P | 6 | Dual | 增强型MOSFET | 272mW | 5.8 ns | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 155pF @ 20V | 2.2nC @ 4.5V | 6.5ns | 20V | 6.5 ns | 880mA | -1.2V | 12V | 0.88A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 990.6μm | 2.1844mm | 1.3462mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
FDC6321C | ON Semiconductor | 数据表 | 6000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 680mA 460mA | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 450mOhm | 900mW | 鸥翼 | 680mA | 2 | Dual | 增强型MOSFET | 900mW | 3 ns | 700mW | N and P-Channel | SWITCHING | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 5V | 9ns | N-CHANNEL AND P-CHANNEL | 9 ns | 460mA | 800mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 9 pF | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | FDG6301N-F085 | ON Semiconductor | 数据表 | 48200 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 42 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 4 ns | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | 活跃 | 1 (Unlimited) | 6 | 逻辑电平兼容 | 300mW | 鸥翼 | Dual | 增强型MOSFET | 300mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 4.5ns | 25V | 3.2 ns | 220mA | 850mV | 8V | 4Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF8915TRPBF | Infineon Technologies | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 7.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | 活跃 | 1 (Unlimited) | EAR99 | 18.3MOhm | 20V | 2W | 8.9A | IRF8915PBF | Dual | 2W | 6 ns | 2 N-Channel (Dual) | 18.3m Ω @ 8.9A, 10V | 2.5V @ 250μA | 540pF @ 10V | 7.4nC @ 4.5V | 12ns | 3.6 ns | 8.9A | 2.5V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
NTJD4401NT1G | ON Semiconductor | 数据表 | 9255 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 786 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 220mOhm | Tin (Sn) | 20V | 270mW | 鸥翼 | 260 | 630mA | 40 | NTJD4401N | 6 | Dual | 增强型MOSFET | 270mW | 83 ns | 2 N-Channel (Dual) | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 227ns | 227 ns | 630mA | 920mV | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 920 mV | 5 pF | 990.6μm | 2.1844mm | 1.3462mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
FDC6327C | ON Semiconductor | 数据表 | 2475 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2.7A 1.9A | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 80MOhm | TIN (SN) | 960mW | 鸥翼 | 2.7A | 2 | Dual | 增强型MOSFET | 960mW | 700mW | N and P-Channel | SWITCHING | 80m Ω @ 2.7A, 4.5V | 1.5V @ 250μA | 325pF @ 10V | 4.5nC @ 4.5V | 14ns | N-CHANNEL AND P-CHANNEL | 1.9A | 900mV | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 900 mV | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | FDG6332C | ON Semiconductor | 数据表 | 15904 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 700mA 600mA | 2 | 6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 300MOhm | 300mW | 鸥翼 | 700mA | 20V | Dual | 7A | 增强型MOSFET | 300mW | N and P-Channel | SWITCHING | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 113pF @ 10V | 1.5nC @ 4.5V | 14ns | N-CHANNEL AND P-CHANNEL | 14 ns | 700mA | 1.1V | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
NTZD3155CT2G | ON Semiconductor | 数据表 | 100497 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 540mA 430mA | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 20V | 250mW | FLAT | 260 | 540mA | 40 | NTZD3155C | 6 | Dual | 增强型MOSFET | 250mW | N and P-Channel | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 2.5nC @ 4.5V | 12ns | N-CHANNEL AND P-CHANNEL | 19 ns | 540mA | 6V | 0.54A | 0.55Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | FDG6322C | ON Semiconductor | 数据表 | 30 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 220mA 410mA | 55 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 4Ohm | Tin (Sn) | 逻辑电平兼容 | 300mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 300mW | N and P-Channel | SWITCHING | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 8ns | N-CHANNEL AND P-CHANNEL | 8 ns | 220mA | 850mV | 8V | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850 mV | 1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
FDS9958 | ON Semiconductor | 数据表 | 494220 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 6 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2.9A | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 105MOhm | 900mW | 鸥翼 | Dual | 增强型MOSFET | 2W | 6 ns | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 2.9A, 10V | 3V @ 250μA | 1020pF @ 30V | 23nC @ 10V | 3ns | 60V | 6 ns | -2.9A | -1.6V | 20V | -60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 65 pF | 1.575mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
FDS6990A | ON Semiconductor | 数据表 | 95556 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 28 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 18MOhm | 逻辑电平兼容 | 30V | 900mW | 鸥翼 | 7.5A | Dual | 增强型MOSFET | 1.6W | 10 ns | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 7.5A, 10V | 3V @ 250μA | 1235pF @ 15V | 17nC @ 5V | 5ns | 5 ns | 7.5A | 1.9V | 20V | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 1.57mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | IPG20N06S4L26AATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | SILICON | 2 | 15 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 33W | FLAT | 未说明 | not_compliant | 未说明 | R-PDSO-F6 | Dual | 增强型MOSFET | 33W | DRAIN | 2 N-Channel (Dual) | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 无卤素 | 1430pF @ 25V | 20nC @ 10V | 3ns | 10 ns | 20A | 20V | 60V | 35 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFH4251DTRPBF | Infineon Technologies | 数据表 | 112500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 64A 188A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | FASTIRFET™ | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 63W | Dual | 增强型MOSFET | SOURCE | 31W 63W | 2 N-Channel (Dual), Schottky | SWITCHING | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 1314pF @ 13V | 15nC @ 4.5V | 25V | 188A | 1.6V | 20V | 45A | 0.0046Ohm | 61 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900μm | 6mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
4.588728
IRFH4251DTRPBF
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分类:Transistors - FETs, MOSFETs - Arrays
21.892744
